The main purpose of this FIB/SEM equipment is to perform material milling (cutting), 3D characterization, and cross section analysis of epitaxially grown InP, InGaAs, InAlGaAs and InGaAsP layers on InP substrates. The structures may also contain polymer-based planarization layers, SiOx or SiNx dielectric layers and TiPtAu or NiGeAu metal layers.
Publicado
28.07.2026
Aberto para propostas
28.07.2026
Condições atualizadas
28.07.2026
Prazo
07.09.2026
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